Boron-Induced Strain Relaxation in Hydrogen-Implanted SiGe/Si Heterostructures

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题名:	Boron-Induced Strain Relaxation in Hydrogen-Implanted SiGe/Si Heterostructures
作者:	Lee,SW;Chueh,CA;Chang,HT
贡献者:	化學工程與材料工程學系
关键词:	BUFFER LAYER;HIGH-QUALITY;DISLOCATION-DENSITY;GROWTH;SI;SILICON;GE;FILMS
日期:	2009
上传时间:	2010-06-29 17:26:32 (UTC+8)
出版者:	中央大學
摘要:	The strain relaxation behavior of H-implanted Si0.8Ge0.2/Si heterostructures containing a B-doped Si buffer layer was investigated. The annealed H-implanted SiGe/Si samples with a B-doped Si buffer layer exhibit an additional relaxation compared to those with an undoped Si buffer layer. At an annealing temperature of 900 degrees C, relaxation ratios of the H-implanted samples with and without a B-doped Si buffer layer were determined to be 79 and 53%, respectively. The increased relaxation can be attributed to the formation of the larger H-filled bubbles along the interface on both sides of the B-doped Si region. Such an annealed H-implanted SiGe/B-doped Si heterostructure was further demonstrated to have a threading dislocation density of 4.7 X 10(5) cm(-2) with a root-mean-square roughness of only 0.48 nm. This work offers an effective approach to fabricate high quality strain-relaxed thin SiGe epilayers for high mobility device applications. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3236680]
關聯:	JOURNAL OF THE ELECTROCHEMICAL SOCIETY
显示于类别:	[化學工程與材料工程研究所] 期刊論文

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