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    题名: Boron-Induced Strain Relaxation in Hydrogen-Implanted SiGe/Si Heterostructures
    作者: Lee,SW;Chueh,CA;Chang,HT
    贡献者: 化學工程與材料工程學系
    关键词: BUFFER LAYER;HIGH-QUALITY;DISLOCATION-DENSITY;GROWTH;SI;SILICON;GE;FILMS
    日期: 2009
    上传时间: 2010-06-29 17:26:32 (UTC+8)
    出版者: 中央大學
    摘要: The strain relaxation behavior of H-implanted Si0.8Ge0.2/Si heterostructures containing a B-doped Si buffer layer was investigated. The annealed H-implanted SiGe/Si samples with a B-doped Si buffer layer exhibit an additional relaxation compared to those with an undoped Si buffer layer. At an annealing temperature of 900 degrees C, relaxation ratios of the H-implanted samples with and without a B-doped Si buffer layer were determined to be 79 and 53%, respectively. The increased relaxation can be attributed to the formation of the larger H-filled bubbles along the interface on both sides of the B-doped Si region. Such an annealed H-implanted SiGe/B-doped Si heterostructure was further demonstrated to have a threading dislocation density of 4.7 X 10(5) cm(-2) with a root-mean-square roughness of only 0.48 nm. This work offers an effective approach to fabricate high quality strain-relaxed thin SiGe epilayers for high mobility device applications. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3236680]
    關聯: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
    显示于类别:[化學工程與材料工程研究所] 期刊論文

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