English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 80990/80990 (100%)
造訪人次 : 42841743      線上人數 : 1193
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋


    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/26387


    題名: Electromigration-Induced Failure of Ni/Cu Bilayer Bond Pads Joined with Sn(Cu) Solders
    作者: Hsiao,YH;Tseng,HW;Liu,CY
    貢獻者: 化學工程與材料工程學系
    關鍵詞: INTERFACIAL REACTIONS;CU
    日期: 2009
    上傳時間: 2010-06-29 17:26:54 (UTC+8)
    出版者: 中央大學
    摘要: The effect of electromigration (EM) on Sn(Cu)/Ni/Cu solder joint interfaces under current stressing of 10(4) A/cm(2) at 160A degrees C was studied. In the pure Sn/Ni/Cu case, the interfacial compound layer was mainly the Cu6Sn5 compound phase, which suffered serious EM-induced dissolution, eventually resulting in serious Cu-pad consumption. In the Sn-0.7Cu case, a (Cu,Ni)(6)Sn-5 interfacial compound layer formed at the joint interface, which showed a strong resistance to EM-induced dissolution. Thus, there was no serious consumption of the Cu pad under current stressing. In the Sn-3.0Cu case, we believe that thea massive pound Cu6Sn5 phase in the solder matrix eased possible EM-induced dissolution at the interfacial compound layer due to current stressing.
    關聯: JOURNAL OF ELECTRONIC MATERIALS
    顯示於類別:[化學工程與材料工程研究所] 期刊論文

    文件中的檔案:

    檔案 描述 大小格式瀏覽次數
    index.html0KbHTML457檢視/開啟


    在NCUIR中所有的資料項目都受到原著作權保護.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明