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    题名: Formation and Characterization of Periodic Arrays of Nickel Silicide Nanodots on Si(111) Substrates
    作者: Cheng,SL;Wang,CH;Chen,H
    贡献者: 化學工程與材料工程學系
    关键词: ELECTRON-BEAM LITHOGRAPHY;NANOSPHERE LITHOGRAPHY;EPITAXIAL NISI2;OXIDE OPENINGS;FABRICATION;SI
    日期: 2009
    上传时间: 2010-06-29 17:27:00 (UTC+8)
    出版者: 中央大學
    摘要: We report here the first study on the formation of two-dimensional (2D) periodic arrays of nickel metal and Ni-silicide nanodots on Si(111) substrates by the colloidal nanosphere lithography (NSL) and thermal annealing techniques. For the Ni metal nanodot array on Si(111) sample after annealing, NiSi2 appears to form as the first silicide phase at a temperature as low as 250 degrees C. From transmission electron microscopy (TEM) and electron diffraction analyses, the NiSi2 nanodots were found to grow epitaxially on the Si(l 11) surface with the crystallographic relationships NiSi2[111] parallel to Si[111] and NiSi2(2 (2) over bar0) parallel to Si(2 (2) over bar0). In the higher temperatures annealed samples, many of the epitaxial NiSi2 nanodots were observed to have truncated shapes, and the formation of the faceted structures became more pronounced as the annealing temperature increased. The observed results demonstrate that using the colloidal NSL and heat treatment approaches, it is expected that the investigations of the interfacial reactions of various metal nanodot arrays on Si-based substrates can be achieved. (C) 2009 The Japan Society of Applied Physics
    關聯: JAPANESE JOURNAL OF APPLIED PHYSICS
    显示于类别:[化學工程與材料工程研究所] 期刊論文

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