Reflectivity and Abnormal Absorption at ITO/Al Interface

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/26425

Title:	Reflectivity and Abnormal Absorption at ITO/Al Interface
Authors:	Lin,YH;Liu,CY
Contributors:	化學工程與材料工程學系
Keywords:	LIGHT-EMITTING-DIODES;P-TYPE GAN;OHMIC CONTACT
Date:	2009
Issue Date:	2010-06-29 17:27:46 (UTC+8)
Publisher:	中央大學
Abstract:	The electrical and optical thermal stability of indium tin oxide (ITO)/Al bilayers are investigated in this study. The electrical resistivity of ITO and ITO/Al multilayers, both about 1 x 10(-3) Omega cm after annealing at 300A degrees C for 1 min, are measured by the four-probe measurement method. In addition to the electrical measurements, we also observe the rapid initial diffusion of Al atoms into the ITO thin films. When the diffusing elemental Al atoms occupy interstitial sites they tend to form defects, causing a serious decrease in the reflectance of the a-ITO/Al bilayer in the wavelength region from 400 nm to 600 nm.
Relation:	JOURNAL OF ELECTRONIC MATERIALS
Appears in Collections:	[National Central University Department of Chemical & Materials Engineering] journal & Dissertation

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