SiGe nanorings by ultrahigh vacuum chemical vapor deposition

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/26429

Title:	SiGe nanorings by ultrahigh vacuum chemical vapor deposition
Authors:	Lee,CH;Shen,YY;Liu,CW;Lee,SW;Lin,BH;Hsu,CH
Contributors:	化學工程與材料工程學系
Keywords:	MOLECULAR-BEAM EPITAXY;GE;SURFACE;RINGS
Date:	2009
Issue Date:	2010-06-29 17:27:51 (UTC+8)
Publisher:	中央大學
Abstract:	Formation of SiGe nanorings from Si capped Si0.1Ge0.9 quantum dots (QDs) grown at 500 degrees C by ultrahigh vacuum chemical vapor deposition was investigated. SiGe nanorings have average diameter, width, and depth of 185, 30, and 9 nm, respectively. Based on both Raman and x-ray diffraction results, the formation of SiGe nanorings can be attributed to Ge outdiffusion from central SiGe QDs during in situ annealing. Moreover, the depth of SiGe nanorings can be controlled by Si cap thickness. The Si cap is essential for nanorings formation.
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[National Central University Department of Chemical & Materials Engineering] journal & Dissertation

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