Modeling of dopant segregation in vertical zone-melting crystal growth

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/26516

Title:	Modeling of dopant segregation in vertical zone-melting crystal growth
Authors:	Lan,CW;Liang,MC
Contributors:	化學工程與材料工程學系
Keywords:	TRAVELING HEATER METHOD;FINITE-ELEMENT METHOD;DIRECTIONAL SOLIDIFICATION;NUMERICAL-SIMULATION;SOLUTE SEGREGATION;BRIDGMAN GROWTH;MASS-TRANSFER;CONVECTION;AMPOULE;SYSTEMS
Date:	1998
Issue Date:	2010-06-29 17:29:52 (UTC+8)
Publisher:	中央大學
Abstract:	Computer simulation is conducted to study the dynamic dopant segregation, both radial and axial, in vertical zone melting (VZM) crystal growth. Fluid flow and heat and mass transfer, as well as the dynamic evolution of interfaces, are simulated simultaneously using a robust finite-volume scheme. With the present scheme, excellent global dopant conservation is obtained, and it is not affected by meshes and convection. Gallium-and silicon-doped germanium growth are used as examples. Under normal gravity condition, due to the vigorous natural convection in the melt, the dopant is well mixed, and the axial segregation is close to that with complete mixing. With convection, the effective segregation coefficient attains a constant value quickly, and remains about the same for the rest of the growth. A scaling relationship of the solute boundary layer with the thermal Rayleigh number is also presented. Using a predoped zone, axial segregation is greatly reduced, but still affected by the change of melt volume. Due to the much larger segregation coefficient of silicon in germanium, axial dopant concentration of silicon reaches a pseudo-steady state quickly. (C) 1998 Elsevier Science B.V. All rights reserved.
Relation:	JOURNAL OF CRYSTAL GROWTH
Appears in Collections:	[National Central University Department of Chemical & Materials Engineering] journal & Dissertation

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