Phase equilibria of the Si-Ge-Ti system relevant to the reactions between SiGe alloys and Ti

NCU Institutional Repository > 工學院 > 化學工程與材料工程研究所 > 期刊論文 > Item 987654321/26521

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/26521

题名:	Phase equilibria of the Si-Ge-Ti system relevant to the reactions between SiGe alloys and Ti
作者:	Jain,TA;Kao,CR
贡献者:	化學工程與材料工程學系
关键词:	C54 TITANIUM GERMANOSILICIDE;SILICON-GERMANIUM ALLOYS;STABILITY;MORPHOLOGY;SUBSTRATE;FIELD
日期:	1998
上传时间:	2010-06-29 17:29:59 (UTC+8)
出版者:	中央大學
摘要:	The semiconductor-rich region of the Si-Ge-Ti ternary isotherm at 900 degrees C was determined by metallography, x-ray diffraction, and electron microprobe analysis. The sample alloys were prepared by are-melting. These alloys were brought to equilibrium by annealing at 900 degrees C for 400 h. It was confirmed that at 900 degrees C TiSi2 and TiGe2 form a continuous solid solution Ti(Si1-yGey)(2) with the C54 crystal structure. It was also shown that, other than Ti(Si1-yGey)(2) and Si1-xGex, there is not any binary or ternary phase within the Si-Ge-TiGe2-TiSi2 trapezoid region; Between the Ti(Si1-yGey)(2) and Si1-xGex single-phase fields is the Ti(Si1-yGey)(2)-Si1-xGex two-phase region. The tie-lines for this two-phase region were determine The tie-lines tilt slightly toward the TiSi2 and Go corners. In other words, at equilibrium, the silicon to germanium atomic ratio is larger in Ti(Si1-yGey)(2) than in Si1-xGex (x > y). This tendency for tie-lines to tilt toward the TiSi2 and Ge corners had been proposed in the literature as the reason for the interesting microstructure evolution during the reactions between SiGe alloys and Ti. In addition, the possible diffusion paths for the reactions between SiGe alloys and Ti were discussed based on the obtained isotherm. Recognizing Si and Ge have higher mobilities in Ti(Si1-yGey)(2), it is predicted that for SiGe the extent of concentration change is large but occurs over a shorter distance, and for TiSi2, the extent of concentration change is small but occurs over a longer distance.
關聯:	JOURNAL OF ELECTRONIC MATERIALS
显示于类别:	[化學工程與材料工程研究所] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	328	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing

数据加载中.....