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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/26597

    Title: Double graded-gap hydrogenated amorphous silicon carbide thin-film light-emitting diode with composition-graded N layer and carbon-increasing P layer
    Authors: Chen,YA;Chen,JK;Tsay,WC;Laih,LH;Hong,JW;Chang,CY
    Contributors: 化學工程與材料工程學系
    Keywords: N/A
    Date: 1996
    Issue Date: 2010-06-29 17:31:59 (UTC+8)
    Publisher: 中央大學
    Abstract: An hydrogenated amorphous silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diode (TFLED), in which a composition-graded n layer and carbon-increasing p layer respectively replace the constant optical-gap p-a-SiC:H layer and n-a-SiC:H layer employed in the previously reported double graded-gap (DG) TFLED and which contains dopant-graded p-i and i-n junctions, was successfully fabricated tu improve the electroluminescence (EL) of TFLED. This device had a brightness of 400 cd/m(2) at an injection current density of 600 mA/cm(2) and its EL threshold voltage (V-th) was only 9.0 V. The device EL spectrum showed a peak at 586 nm wavelength and emitted yellowish-orange light. The proposed TFLED had good stability of EL intensity and the EL spectrum during normal operation. The optimum conditions of rapid thermal annealing (RTA), which improved the ohmic contact between the amorphous layer and external electrode of the device, were 5 min at 300 degrees C in a 250 Torr H-2 ambient.
    Appears in Collections:[化學工程與材料工程研究所] 期刊論文

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