Carbon nanotube array vias for interconnect applications

NCU Institutional Repository > 工學院 > 機械工程研究所 > 期刊論文 > Item 987654321/26838

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/26838

题名:	Carbon nanotube array vias for interconnect applications
作者:	Ting,JH;Chiu,CC;Huang,FY
贡献者:	機械工程研究所
关键词:	ELECTRICAL-TRANSPORT;HYDROGEN;GROWTH
日期:	2009
上传时间:	2010-06-29 18:01:25 (UTC+8)
出版者:	中央大學
摘要:	The purpose of this study is to investigate the effect of carbon nanotube (CNT) growth parameters on CNT via resistance and examine the transverse motion of electrons in the CNT bundle vias. Single vias of 3.85x3.85 and 2.45x2.45 mu m(2) correspond to 0.35x0.35 mu m(2) 6x6 and 4x4 array vias, respectively. With nickel catalyst, CNTs were grown by microwave plasma-enhanced chemical vapor deposition method. Two-terminal CNT via chains of single via and array vias were fabricated on the tantalum metal electrodes. The increase in pretreatment power or substrate temperature resulted in the decrease in CNT diameters and thus the increase in CNT packing density due to the etching effect of exciting hydrogen. This led to the decrease in CNT via resistance owing to more conducting channels. The increase in growth power or substrate temperature enhanced the CNT graphitization and hence yielded the decrease in CNT resistances as well as CNT via resistances. In the same via area, the CNT via resistance of array vias is lower than that of a single via. This could be ascribed to less tube-tube junctions and thus lower electrical resistance in the array vias. Accordingly, the transverse motion of electrons in the CNT bundle vias was demonstrated. Therefore, the integration of CNT array vias with CNT bundles is proposed for optimizing the conductivity of CNT vias in the global interconnects where the via dimensions are more alleviated.
關聯:	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
显示于类别:	[機械工程研究所] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	753	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing

数据加载中.....