English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 77144/77145 (100%)
造訪人次 : 39764105      線上人數 : 575
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋


    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/26854


    題名: Electrical-optical analysis of a GaN/sapphire LED chip by considering the resistivity of the current-spreading layer
    作者: Chen,JC;Sheu,GJ;Hwu,FS;Chen,HI;Sheu,JK;Lee,TX;Sun,CC
    貢獻者: 機械工程研究所
    關鍵詞: LIGHT-EMITTING-DIODES;EXTRACTION;DESIGN
    日期: 2009
    上傳時間: 2010-06-29 18:01:46 (UTC+8)
    出版者: 中央大學
    摘要: The effects of current distribution in LED chips on the electrical potential and optical light extraction efficiency are investigated by a numerical simulation. The results show that when the resistivity of the current-spreading layer is decreased there is current-crowding near the n-contact. On the other hand, when the resistivity in the current-spreading layer increases, there is current-crowding near the p-contact. When the current is crowded near the n-contact due to less resistivity of the current-spreading layer, the input power is lower because of the smaller series resistance in the chip, and the light extraction efficiency is higher since the shadowing effect of the p-contact can be avoided. For L (p) = 50 mu m in this study, the light extraction efficiency at rho (ITO) = 0.1 x 10(-3) Omega center dot cm is 1.4 times better than that when L (p) = 100 mu m, even though the driving voltage is raised 1.02 times.
    關聯: OPTICAL REVIEW
    顯示於類別:[機械工程研究所] 期刊論文

    文件中的檔案:

    檔案 描述 大小格式瀏覽次數
    index.html0KbHTML506檢視/開啟


    在NCUIR中所有的資料項目都受到原著作權保護.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明