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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/26872


    Title: Low Stress Silicon Layer Transfer onto Quartz Through Hydrogen Capture within Si (B/Ge) Buried Layer
    Authors: Huang,CH;Ho,CC;Jeng,SC;Lee,TH
    Contributors: 機械工程研究所
    Keywords: WAFERS;CUT
    Date: 2009
    Issue Date: 2010-06-29 18:02:09 (UTC+8)
    Publisher: 中央大學
    Abstract: An epitaxial single-crystalline Si layer, 715 nm thick, was transferred onto quartz by wafer bonding and diffused-hydrogen ion cutting below 180 degrees C. A sharp interface for trapping hydrogen atoms was created by the epitaxial growth of an undoped silicon layer on top of a boron/germanium-doped silicon layer. An interfacial hydrogen concentration of 1.5 x 10(22) cm(-3) was achieved by exposure to an atmospheric-pressure plasma. Following annealing at 180 degrees C and subsequent mechanically induced crack propagation at room temperature, a smooth (root-mean-square = 1.14 nm), damage-free silicon layer was transferred onto quartz. (C) 2009 The Electrochemical Society. [DOI:10.1149/1.3231136] All rights reserved.
    Relation: ELECTROCHEMICAL AND SOLID STATE LETTERS
    Appears in Collections:[機械工程研究所] 期刊論文

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