Flow simulation for chemical mechanical planarization

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题名:	Flow simulation for chemical mechanical planarization
作者:	Fu,MN;Chou,FC
贡献者:	機械工程研究所
关键词:	STRESS;CMP
日期:	1999
上传时间:	2010-06-29 18:03:16 (UTC+8)
出版者:	中央大學
摘要:	In this paper we present a three-dimensional fluid dynamics simulation for chemical mechanical planarization (CMP) processes. The slurry shearing stress on the wafer surface is usually considered to be closely related to the polishing rate. To our knowledge, this is the first work that addresses the wafer-scale removal rate and nonuniformity based on flow simulation. The simulation results for the trends of wafer-scale-averaged slurry shearing stress and nonuniformity agree with those of existing removal rates and nonuniformity data. The present simulation can be used to analyze or predict the characteristics of removal rate and nonuniformity in the CMP processes that use a hard pad. The present predictions show that the nonuniformity value decreases with increasing wafer diameter for a fixed set of pad and wafer rotation speeds. This may explain why the recent CMP work for 12-inch wafer operated at a high pad rotation speed.
關聯:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
显示于类别:	[機械工程研究所] 期刊論文

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