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    题名: 離子束製作氧化矽之化學成份與表面型態分析;The study of the Ion Beam induced the topography and the oxidation of silicon
    作者: 余錦順;Chin-Shun Yu
    贡献者: 機械工程研究所
    关键词: IC技術;氧化薄膜;離子束應用;Ion Beam Synthesis;IC technology;oxide thin film
    日期: 2006-06-30
    上传时间: 2009-09-21 11:53:45 (UTC+8)
    出版者: 國立中央大學圖書館
    摘要: 離子束應用於材料主要分為兩個方面。離子束材料合成(IBS, Ion Beam Synthesis)包括離子束與物理或化學氣相沉積結合而發展起來的新技術,其中離子束輔助沉積(IBAD)、離子團簇沉積(ICB,Ionized Cluster Beam) 70年代就已發展;另一方面則是用不同能量的離子植入材料表層達到改善材料表面性質的目的。 在IC技術發展中,薄膜氧化層最主要作為閘極之絕緣層。元件具備了絕緣層後,閘極電壓可控制通道之開關,且載子在源極與汲極間流動才不會流失,所以絕緣層的品質關係著元件特性的好壞。 鍍膜技術有許多的方法。為了排除CVD製備中可能出現的雜質及熱氧化法因高溫所導致殘留應力產生而形成缺陷,在本文中,使用高真空離子束系統,其真空度達約5x10-8 Torr且潔淨的環境,排除高溫及雜質為目的,使用不同電流密度的離子束在氧環境下碰撞矽基材製備出氧化薄膜。 The Ion Beam applied to the material is mainly divided into two aspects. The Ion Beam Synthesis is the new technology which includes the Ion Beam and Physical of Chemical Vapor Deposition. Ion Beam Assisted Deposition (IBAD) and Ionized Cluster Beam (ICB) has been developed since 1970s. On the other hand, ions with the different energy is implanted into the material surface layer in order to achieve the improvement of the properties of the material surface. In the development of IC technology, oxide’s main achievement is the gate extreme insulation. After the component is insulated, the gate voltage may switch off the control channel, and Carries can’t be lost between source and drain. Therefore, the quality of insulation affects the properties. There are many methods of coating technology and there will be impurity in the CVD and the defect caused by residual stress from the high temperature in the process of thermal oxidation. In order to remove the high temperature and impurity, this paper will discuss the method of bombarding silicon with different beam currents in oxygen environment to produce the oxidized thin film, using Ion Beam System in the high vacuum with the pressure of 5 10-8 Torr in pure environment.
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