English  |  正體中文  |  简体中文  |  Items with full text/Total items : 72887/72887 (100%)
Visitors : 23273643      Online Users : 518
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/2717

    Title: 鋁電解電容器用軟質鋁箔及硬質鋁箔電蝕時電化學舉動之比較研究
    Authors: 曾俊瑋;Jiuan-Wei Tseng
    Contributors: 機械工程研究所
    Keywords: 鋁電解電容器;軟質箔;硬質箔;hard aluminum foil;aluminum foil capacitor;soft aluminum foil
    Date: 2006-07-07
    Issue Date: 2009-09-21 11:54:05 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 本論文主要以研究低壓軟、硬質箔,分別改變電蝕液成份、溫度、電蝕波形等條件,探討鋁箔經電化學蝕刻後,軟、硬質箔之差異性對於腐蝕組織與形貌的影響。 本實驗首先將軟、硬質箔依照不同探討主題來控制不同的電蝕參數,實際電蝕後,再按照EIAJ的規範對電蝕鋁箔做化成處理,並分別量測其靜電容量及重量損失率。利用光學顯微鏡(OM)與電子顯微鏡(SEM)將腐蝕試片作截面、表面、皮膜複製觀察以了解腐蝕孔洞的分佈狀況。再利用恆電位儀觀察在不同電蝕參數下,電位-時間與電位-腐蝕電流關係圖。藉由電位、電流、時間的變化推測腐蝕反應進行時的情形。 由實驗結果得知,適當的硫酸、鹽酸添加量,有較適合蝕孔形成的離子濃度與腐蝕電位,也可以得到較佳的腐蝕組織與靜電容量。改變溫度的實驗,溫度越高Cl-離子的擴散速率也越快,重量損失率也越大。而要得到較適合的腐蝕組織,要控制較適合的電蝕液溫度。而電蝕波形的選擇對於軟、硬質箔各有較適合蝕孔形成的波形,以得到較佳的腐蝕組織與靜電容量。 This thesis focus on the survey of soft and hard aluminum foil primarily. By changing concentration , etching temperature and etching waveform. We investigated the effects of etching morphology on the surface increment. This experiment first used potentiostat to observe the relationship between potential-time and potential-corrosive current under different etching parameters. Thus we could predict the reaction during etching process. According to the selected parameters of electrochemical etching, the aluminum foils have been etched, and the capacitance was measured under EIAJ specifications. For surface, oxide replicas and cross section morphology studies, the samples were examined in the SEM, SEM and OM respectively From the experiments, it was found that there was a proper sulfuric and hydrochloric acid concentration for increment etching. At this concentration we could get a fine microstucture for increasing capacitance. Phosphoric acid could grow a passive film, which protected aluminum from Cl- corrosion. Increased etching temperature could accelerate the diffusion of Cl-. There also had proper etching waveform and temperature for etching process.
    Appears in Collections:[機械工程研究所] 博碩士論文

    Files in This Item:

    File SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明