English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 80990/80990 (100%)
造訪人次 : 41635104      線上人數 : 2283
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 查詢小技巧:
  • 您可在西文檢索詞彙前後加上"雙引號",以獲取較精準的檢索結果
  • 若欲以作者姓名搜尋,建議至進階搜尋限定作者欄位,可獲得較完整資料
  • 進階搜尋


    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/2717


    題名: 鋁電解電容器用軟質鋁箔及硬質鋁箔電蝕時電化學舉動之比較研究
    作者: 曾俊瑋;Jiuan-Wei Tseng
    貢獻者: 機械工程研究所
    關鍵詞: 鋁電解電容器;軟質箔;硬質箔;hard aluminum foil;aluminum foil capacitor;soft aluminum foil
    日期: 2006-07-07
    上傳時間: 2009-09-21 11:54:05 (UTC+8)
    出版者: 國立中央大學圖書館
    摘要: 本論文主要以研究低壓軟、硬質箔,分別改變電蝕液成份、溫度、電蝕波形等條件,探討鋁箔經電化學蝕刻後,軟、硬質箔之差異性對於腐蝕組織與形貌的影響。 本實驗首先將軟、硬質箔依照不同探討主題來控制不同的電蝕參數,實際電蝕後,再按照EIAJ的規範對電蝕鋁箔做化成處理,並分別量測其靜電容量及重量損失率。利用光學顯微鏡(OM)與電子顯微鏡(SEM)將腐蝕試片作截面、表面、皮膜複製觀察以了解腐蝕孔洞的分佈狀況。再利用恆電位儀觀察在不同電蝕參數下,電位-時間與電位-腐蝕電流關係圖。藉由電位、電流、時間的變化推測腐蝕反應進行時的情形。 由實驗結果得知,適當的硫酸、鹽酸添加量,有較適合蝕孔形成的離子濃度與腐蝕電位,也可以得到較佳的腐蝕組織與靜電容量。改變溫度的實驗,溫度越高Cl-離子的擴散速率也越快,重量損失率也越大。而要得到較適合的腐蝕組織,要控制較適合的電蝕液溫度。而電蝕波形的選擇對於軟、硬質箔各有較適合蝕孔形成的波形,以得到較佳的腐蝕組織與靜電容量。 This thesis focus on the survey of soft and hard aluminum foil primarily. By changing concentration , etching temperature and etching waveform. We investigated the effects of etching morphology on the surface increment. This experiment first used potentiostat to observe the relationship between potential-time and potential-corrosive current under different etching parameters. Thus we could predict the reaction during etching process. According to the selected parameters of electrochemical etching, the aluminum foils have been etched, and the capacitance was measured under EIAJ specifications. For surface, oxide replicas and cross section morphology studies, the samples were examined in the SEM, SEM and OM respectively From the experiments, it was found that there was a proper sulfuric and hydrochloric acid concentration for increment etching. At this concentration we could get a fine microstucture for increasing capacitance. Phosphoric acid could grow a passive film, which protected aluminum from Cl- corrosion. Increased etching temperature could accelerate the diffusion of Cl-. There also had proper etching waveform and temperature for etching process.
    顯示於類別:[機械工程研究所] 博碩士論文

    文件中的檔案:

    檔案 大小格式瀏覽次數


    在NCUIR中所有的資料項目都受到原著作權保護.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 隱私權政策聲明