微陽極導引電鍍銅其組織及底部覆蓋範圍之探討; Research of the morphology and deposition region of Cu microstructure by micro-anode guided electroplating (MAGE)

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題名:	微陽極導引電鍍銅其組織及底部覆蓋範圍之探討;Research of the morphology and deposition region of Cu microstructure by micro-anode guided electroplating (MAGE)
作者:	賴格源;Ge-Yuan Lai
貢獻者:	機械工程研究所
關鍵詞:	微陽極導引電鍍;析鍍範圍;析鍍形貌;電場強度;MAGE;coverage area;morphology;electrical fiel
日期:	2006-07-21
上傳時間:	2009-09-21 11:54:12 (UTC+8)
出版者:	國立中央大學圖書館
摘要:	本研究採用微陽極導引電鍍法(Micro anode guided electroplating ，MAGE)，在0.80M硫酸銅鍍液中析鍍銅金屬。分為單步析鍍、步進析鍍的實驗探討偏壓、間距對析鍍範圍、形貌及電場強度的影響。單步析鍍結果顯示：間距5μm、偏壓3.2V，金屬析鍍範圍為217.91μ m；在相同的間距(5um)、偏壓2.9V下，金屬析鍍範圍為129.69μm，金屬的析鍍範圍會隨著偏壓減小而縮小。在間距5μm、偏壓3.2V，析鍍所得表面平滑度較差；但在偏壓2.9V下，析鍍物表面均勻、細緻。利用有限元素分析法可估算金屬析鍍成長所需最低電場強度為4200V/m。步進析鍍研究結果得知：間距5μm、偏壓在2.9~3.2V之間，金屬析鍍臨界範圍之直徑分別為206.75、228.25、307.25及327.75μm，金屬臨界析鍍範圍分別隨著偏壓增加而擴大。間距5μm時，偏壓由2.9增加至3.2V時，析鍍物的顆粒粒徑分別為0.69、1.05、2.15~7.6及4.01~15.86，顯示析鍍物顆粒隨偏壓增加而加粗；固定偏壓在2.9V時，間距由5增加至10μm，析鍍物的顆粒粒徑分別為由0.69下降至0.45μm，顯示析鍍顆粒隨著兩極間距增加而減小。採用有限元素分析法可估算金屬開始析鍍的臨界電場強度為69.9V/m。 Micro-anode guided electroplating(MAGE) method was investigated to deposit Cu micrometer column in 0.8M sulfate bath using single-step、stepping and constant period electroplating . The effect of electrical bias、inter-electrode gap , on the coverage area, morphology and microstructure of the deposit was interest. The single-step electroplating resulted in that for the inter-electrode gap at 5um, the coverage area of the dposit on the substructure decreases from 217.69 um to 129.69 um with decrease the bias from 3.2 to 2.9V. The morphology of the micrometer Cu-columns exhibits a rough surface at higher bias (ie. 3.2V) at a gap of 5um. It displays uniform and fine-particle micro meter colums at lower bias (ie. 2.9V). Estinating the electric field for the growth of the micrometer columns by finite element analsis leads for a lowest field strength of 4200V/m to grow the micrometer columns. Stepping electroplating resulted in the follow order for the diameter of the coverage area of micrometer Cu-columns ：206.75<228.25<307.25<327.75 um with decrease the bias from 3.2V to 2.9V at inter-electrode gap of 5um. The SEM morphology exhibits that the particles deposited increses their diameter on the order 0.69<1.05<2.15~7.6<4.01~15.68um with increase the bias for 2.9 to 3.2V at a gap of 5um. Fixing at a bias of 2.9V and varying the gap from 5 to 10um, the particles deposited decrease their diameter for 0.69 to 0.45um. It is evident that the particle size of the deposits increase with bias but decrease with the gap between electrodes. The electrical field was estimated to be at least 69.9V/m for commense of coverage on the substrate for MAGE plating.
顯示於類別:	[機械工程研究所] 博碩士論文

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