Reduced impact ionization by using In-0.53(AlxGa1-x)(0.47)As (x=0.1,0.2) channel in InP HEMTs

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题名:	Reduced impact ionization by using In-0.53(AlxGa1-x)(0.47)As (x=0.1,0.2) channel in InP HEMTs
作者:	Lai,LS;Chan,YJ;Pan,JW;Sheih,JL;Chyi,JI
贡献者:	環境工程研究所
关键词:	TRANSISTORS
日期:	1997
上传时间:	2010-06-29 18:21:54 (UTC+8)
出版者:	中央大學
摘要:	In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors (HEMTs) lattice-matched to InP substrates have achieved a great successful role on microwave devices and circuits. However, a significant kink effect is observed in I-V characteristics. This kink effect together with a high output conductance is associated with a higher impact ionization rate in the InGaAs channel, which deteriorates the device performance. Due to this disadvantage of low energy bandgap InGaAs channel, in this study, we added a small amount of Al into the InGaAs channel to enhance the bandgap, and expect a reduction of impact ionization process. In the mean while, the life-time testing associated device performance could also be improved.
關聯:	COMPOUND SEMICONDUCTORS 1996
显示于类别:	[環境工程研究所 ] 期刊論文

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