塗佈奈米銀p型矽(100)在NH4F/H2O2 水溶液中之電化學蝕刻行為 ;Electrochemical etch of p-Si(100) dispersed with nano-Ag particles in the NH4F/H2O2 solution

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题名:	塗佈奈米銀p型矽(100)在NH4F/H2O2 水溶液中之電化學蝕刻行為;Electrochemical etch of p-Si(100) dispersed with nano-Ag particles in the NH4F/H2O2 solution
作者:	趙冠翔;CHAO KUAN
贡献者:	機械工程研究所碩士在職專班
关键词:	p-型(100)矽單晶;電化學蝕刻;氟化銨;p-type(100) silicon;electrochemical etching;ammo
日期:	2009-07-23
上传时间:	2009-09-21 11:54:23 (UTC+8)
出版者:	國立中央大學圖書館
摘要:	本論文之內容主要探討奈米銀顆粒塗佈於p-型矽(100)單晶上，在含氟化銨(Ammonium fluoride, NH4F)和過氧化氫(hydrogen peroxide, H2O2)的混合溶液中，經電化學蝕刻後的孔洞形貌特性研究。蝕刻步驟先採用陽極動態極化法，在混合溶液中定義出適當之蝕刻電位，以利進行定電位蝕刻，進而研究蝕刻孔洞的形貌差異。實驗結果顯示，利用電化學蝕刻法，在含氟化銨與過氧化氫混合蝕液中，可將塗佈奈米銀顆粒的矽晶表面蝕刻出深孔洞，此蝕刻速率隨著過氧化氫濃度的增加而提高。藉由電化學量測法，可得知：蝕刻液溫度增加、或過氧化氫的濃度提高時，此系統之腐蝕電位往負電位移動，且腐蝕電流增加，加速蝕刻速率，當溫度達60oC 時有最高的蝕刻速率，藉由阿瑞尼士方程式可以求出其系統的蝕刻之活化能為 48.4 KJ/mol。 The aim of this work was to prepare porous silicon(PS) by electrochemical etch of p-type silicon (100) coated with nano-Ag particles in an aqueous solution of ammonium fluoride mixed with hydrogen peroxide. DC potentiodynamic polarization was conducted and the anodic polarization curves were analyzed to find the optimal potentials for potentiostatic preparation of the PS. The results displayed that deep holes were produced electrochemically on the silicon dispersed with nano-Ag particles in the solution containing ammonium fluoride and hydrogen peroxide. The corrosion potential shifts to active direction and the etching rate increases with increasing the reaction temperature and the concentration of hydrogen peroxide. The optimal temperature to obtain porous silicon was at 60℃ to obtain the highest depth. The activation energy is estimated to be 48.4 KJ/mol for the etching system by the Arrhenius plot.
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