English  |  正體中文  |  简体中文  |  Items with full text/Total items : 68069/68069 (100%)
Visitors : 23027840      Online Users : 183
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/27735

    Title: Investigation of thin TiO2 films cosputtered with Si species
    Authors: Hsu,JC;Lee,CC;Chen,HL;Kuo,CC;Wang,PW
    Contributors: 薄膜技術中心
    Date: 2009
    Issue Date: 2010-06-29 19:15:59 (UTC+8)
    Publisher: 中央大學
    Abstract: Titanium dioxide (TiO2) films were fabricated by cosputtering titanium (Ti) target and SiO2 or Si slice with ion-beam-sputtering deposition (IBSD) technique and were postannealed at 450 degrees C for 6 h. The variations of oxygen bonding, which included high-binding-energy oxygen (HBO), bridging oxygen (BO), low-binding-energy oxygen (LBO), and three chemical states of titanium (Ti4+, Ti3+ and Ti2+) were analyzed by X-ray photoelectron spectroscopy (XPS). The enhancement of HBO and reduction of BO in O 1s spectra as functions of SiO2 or Si amount in cosputtered film imply the formation of Si-O-Ti linkage. Corresponding increase of Ti3+ in Ti 2p spectra further confirmed the property modification of the cosputtered film resulting from the variation of the chemical bonding. An observed correlation between the chemical structure and optical properties, refractive index and extinction coefficient, of the SiO2 or Si cosputtered films demonstrated that the change of chemical bonding in the film results in the modi. cation of optical properties. Furthermore, it was found that the optical properties of the cosputtered films were strongly depended on the cosputtering targets. In case of the Si cosputtered films both the refractive indices and extinction coefficients were reduced after postannealing, however, the opposite trend was observed in SiO2 cosputtered films. (C) 2008 Elsevier B. V. All rights reserved.
    Appears in Collections:[薄膜技術研究中心] 期刊論文

    Files in This Item:

    File Description SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明