Investigation of thin TiO2 films cosputtered with Si species

NCUIR > Research Center > Thin Film Technology Center > journal & Dissertation > Item 987654321/27735

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Title:	Investigation of thin TiO2 films cosputtered with Si species
Authors:	Hsu,JC;Lee,CC;Chen,HL;Kuo,CC;Wang,PW
Contributors:	薄膜技術中心
Keywords:	RAY PHOTOELECTRON-SPECTROSCOPY;OXIDE FILMS;ION;DEPOSITION;TITANIUM;SILICON;STRESS
Date:	2009
Issue Date:	2010-06-29 19:15:59 (UTC+8)
Publisher:	中央大學
Abstract:	Titanium dioxide (TiO2) films were fabricated by cosputtering titanium (Ti) target and SiO2 or Si slice with ion-beam-sputtering deposition (IBSD) technique and were postannealed at 450 degrees C for 6 h. The variations of oxygen bonding, which included high-binding-energy oxygen (HBO), bridging oxygen (BO), low-binding-energy oxygen (LBO), and three chemical states of titanium (Ti4+, Ti3+ and Ti2+) were analyzed by X-ray photoelectron spectroscopy (XPS). The enhancement of HBO and reduction of BO in O 1s spectra as functions of SiO2 or Si amount in cosputtered film imply the formation of Si-O-Ti linkage. Corresponding increase of Ti3+ in Ti 2p spectra further confirmed the property modification of the cosputtered film resulting from the variation of the chemical bonding. An observed correlation between the chemical structure and optical properties, refractive index and extinction coefficient, of the SiO2 or Si cosputtered films demonstrated that the change of chemical bonding in the film results in the modi. cation of optical properties. Furthermore, it was found that the optical properties of the cosputtered films were strongly depended on the cosputtering targets. In case of the Si cosputtered films both the refractive indices and extinction coefficients were reduced after postannealing, however, the opposite trend was observed in SiO2 cosputtered films. (C) 2008 Elsevier B. V. All rights reserved.
Relation:	APPLIED SURFACE SCIENCE
Appears in Collections:	[Thin Film Technology Center] journal & Dissertation

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