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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/28035

    Title: AlGaN/GaN Schottky Barrier Photodetector With Multi-MgxNy/GaN Buffer
    Authors: Chang,SJ;Lee,KH;Chang,PC;Wang,YC;Kuo,CH;Wu,SL
    Contributors: 光電科學研究所
    Date: 2009
    Issue Date: 2010-06-29 19:40:41 (UTC+8)
    Publisher: 中央大學
    Abstract: AlGaN/GaN heterostructure Schottky barrier photodetector (PD) with multi-MgxNy/GaN buffer was proposed and fabricated. Compared with AlCaN/GaN heterostructure PD prepared on conventional low-temperature GaN buffer, it was found that we can reduce dark leakage current by more than three orders of magnitude. It was also found that we can use the mtilti-MgxNy/GaN buffer to suppress photoconductance gain, enhance UV-to-visible rejection ratio, reduce noise level and enhance the detectivity.
    Appears in Collections:[光電科學研究所] 期刊論文

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