Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/28099

Title:	Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate
Authors:	Chan,CH;Hou,CH;Tseng,SZ;Chen,TJ;Chien,HT;Hsiao,FL;Lee,CC;Tsai,YL;Chen,CC
Contributors:	光電科學研究所
Keywords:	EFFICIENCY
Date:	2009
Issue Date:	2010-06-29 19:41:42 (UTC+8)
Publisher:	中央大學
Abstract:	This letter describes the improved output power of GaN-based light-emitting diodes (LEDs) formed on a nanopatterned sapphire substrate (NPSS) prepared through etching with a self-assembled monolayer of 750-nm-diameter SiO2 nanospheres used as the mask. The output power of NPSS LEDs was 76% greater than that of LEDs on a flat sapphire substrate. Three-dimensional finite-difference time-domain calculation predicted a 40% enhancement in light extraction efficiency of NPSS LEDs. In addition, the reduction of full widths at half maximum in the omega-scan rocking curves for the (0 0 2) and (1 0 2) planes of GaN on NPSS suggested improved crystal quality. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3173817]
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Optics and Photonics] journal & Dissertation

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