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    請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/28103


    題名: Improvement on Optical Properties of GaN Light-Emitting Diode With Mesh-Textured Sapphire Back Delineated by Laser Scriber
    作者: Lee,KT;Lee,YC;Chang,JY;Gong,J
    貢獻者: 光電科學研究所
    關鍵詞: PATTERNED SAPPHIRE;LIFT-OFF;OUTPUT;BLUE
    日期: 2009
    上傳時間: 2010-06-29 19:41:46 (UTC+8)
    出版者: 中央大學
    摘要: The optical properties of gallium nitride light-emitting diode with mesh-textured sapphire back delineated by laser scriber and subsequently coated with silver-copper layers were investigated. This new structure improves the optical characteristics. The electroluminescence and luminous intensities are 30% and 20% stronger than that without mesh-textured trench and silver-copper at 20 mA, respectively. The maximum luminous intensity has 1.6 times enhancement, which is mainly from higher light extraction by the mesh-textured trench.
    關聯: IEEE PHOTONICS TECHNOLOGY LETTERS
    顯示於類別:[光電科學研究所] 期刊論文

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