High performances and reliability of novel GaAs MSM photodetectors with InGaP buffer and capping layers

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/28190

Title:	High performances and reliability of novel GaAs MSM photodetectors with InGaP buffer and capping layers
Authors:	Tsai,CD;Shiao,HP;Lee,CT;Tu,YK
Contributors:	光電科學研究所
Keywords:	SEMICONDUCTOR
Date:	1997
Issue Date:	2010-06-29 19:43:21 (UTC+8)
Publisher:	中央大學
Abstract:	To avoid the trap-induced, low-frequency internal gain and improve the reliability for thermal storage test, a novel structure of GaAs metal-semiconductor-metal photodetector with InGaP buffer and capping layers is investigated, The dark current density of the photodetectors is about 7 mu A/cm(2) Its responsivity at 0.83-mu m wavelength is about 0.48 A/W. After thermal storage at 150 degrees C for 10 h, no performance degradation was found in the novel photodetectors.
Relation:	IEEE PHOTONICS TECHNOLOGY LETTERS
Appears in Collections:	[Graduate Institute of Optics and Photonics] journal & Dissertation

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