Improved performances of InGaP Schottky contact with Ti/Pt/Au metals and MSM photodetectors by (NH4)(2)S-x treatment

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题名:	Improved performances of InGaP Schottky contact with Ti/Pt/Au metals and MSM photodetectors by (NH4)(2)S-x treatment
作者:	Lee,CT;Lan,MH;Tsai,CD
贡献者:	光電科學研究所
关键词:	MOLECULAR-BEAM EPITAXY;TRANSISTORS;PASSIVATION;LASERS;IN0.5GA0.5P;SURFACES;SULFUR;GAIN
日期:	1997
上传时间:	2010-06-29 19:43:24 (UTC+8)
出版者:	中央大學
摘要:	To extend the high performances of the GaAs MSM photodetectors with InGaP buffer and capping layers, the (NH4)(2)S-x treatment of InGaP is investigated. The surface states are reduced by sulfur passivation. Whereupon, the performances of InGaP Schottky contact with Ti/Pt/Au metals are improved. The improved dark current and insensitive responsivity with incident optical power are demonstrated by suitable process control of sulfur passivation. (C) 1997 Elsevier Science Ltd.
關聯:	SOLID-STATE ELECTRONICS
显示于类别:	[光電科學研究所] 期刊論文

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