The effect of O-2 on the quality of diamondlike films formed in a cathodic arc plasma deposition

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题名:	The effect of O-2 on the quality of diamondlike films formed in a cathodic arc plasma deposition
作者:	Chen,PL;Tsai,MY;Lai,GR
贡献者:	光電科學研究所
关键词:	TETRAHEDRAL AMORPHOUS-CARBON;EVAPORATION;GRAPHITE
日期:	1997
上传时间:	2010-06-29 19:43:44 (UTC+8)
出版者:	中央大學
摘要:	Amorphous diamondlike films are deposited on Si wafer at temperature lower than 300 degrees C in a cathodic are plasma deposition (CAPD) system. Graphite plate with density 1.9 g/cm(3) was employed as the cathode target and the carbon source. NdFeB magnets with 1000 G strength were installed behind the graphite tar et to steer the motion of are spots on graphite. The are current was selected as low as 55 A in order to minimize the emission of microparticles from graphite target. The are spots observed were moving steadily on the graphite target with a speed of about 1.5 cm/s. O-2/Ar gas mixtures were introduced into CAPD system and the total pressure was controlled to be 10 mTorr. The effects of the addition of O-2, the rf self-bias (V-B) applied to Si wafer and the deposition temperature (T-S) on the quality of diamondlike films were investigated. It is concluded that the addition of O-2 is the key factor that contributed to the quality improvement of diamondlike films. The higher the partial pressure of O-2, the more significant is the influence of V-B and T-S on the quality improvement of diamondlike films.
關聯:	APPLIED SURFACE SCIENCE
显示于类别:	[光電科學研究所] 期刊論文

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