Characterization of GaAs buffer layer function in GaAs/InP strained structure grown by MBE

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/28209

Title:	Characterization of GaAs buffer layer function in GaAs/InP strained structure grown by MBE
Authors:	Lee,CT;Wang,CY;Chou,YC
Contributors:	光電科學研究所
Keywords:	INP;MESFETS;PERFORMANCE
Date:	1996
Issue Date:	2010-06-29 19:43:58 (UTC+8)
Publisher:	中央大學
Abstract:	For a GaAs/InP strained structure grown by MBE, the influence of the thickness of the GaAs strained buffer layer on crystal quality was investigated and demonstrated. An X-ray diffractometer was used to measure the grown epitaxial layers. From experimental results, it was found that a thickness of strained layer was required to compensate the effect of misfit dislocation due to the lattice mismatch between GaAs and the InP substrate. The required thickness was deduced to be about 2 mu m.
Relation:	THIN SOLID FILMS
Appears in Collections:	[Graduate Institute of Optics and Photonics] journal & Dissertation

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