SIDEGATING EFFECT IMPROVEMENT OF GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR BY MULTIQUANTUM BARRIER STRUCTURE

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/28233

Title:	SIDEGATING EFFECT IMPROVEMENT OF GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR BY MULTIQUANTUM BARRIER STRUCTURE
Authors:	LEE,CT;TSAI,CD;WANG,CY;SHIAO,HP;NEE,TE;SHEN,JN
Contributors:	光電科學研究所
Keywords:	MESFETS;MBE
Date:	1995
Issue Date:	2010-06-29 19:44:35 (UTC+8)
Publisher:	中央大學
Abstract:	The sidegating effect in a GaAs metal-semiconductor field effect transistor is significantly suppressed by the use of a multiquantum barrier (MQB) structure as a buffer layer. The enhancement of potential barrier height of the MQB buffer layer is confirmed from the comparison with a heterostructure buffer layer device. (C) 1995 American Institute of Physics.
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Optics and Photonics] journal & Dissertation

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