矽薄膜轉移技術能創造出複合多種材質特性的基板，於現今半導體材料的發展上已是一不可或缺的技術，唯傳統的智切法進行矽薄膜轉移過程中將使用高溫加熱，在此一過程中將會產生熱應力，這會使得薄膜轉移的過程受到限制，轉移後的薄膜品質也會較差。 本研究主要探討利用光能照射來取代傳統的加熱過程，達到矽薄膜轉移的製程。首先將探討不同波長的光波對於矽氫化合物產生的作用，以了解其反應的機制。於實驗上則利用紅外光跟紫外光照射使佈植於矽晶圓中的氫離子產生反應，使矽晶圓中的氫離子能脫離矽原子的鍵結進而聚合成氫氣，達到分離的效應，使得矽薄膜能轉移至另一片晶圓上面，達成矽薄膜的轉移。 This dissertation studied a method for transferring of silicon thin layers from a first substrate onto a second substrate. Traditionally the first substrate implanted hydrogen and bonded with the second substrate. Using heat treatment to split the silicon thin layer by the formation which growth of hydrogen caused microcracks. In this process of substrates have a lot of thermal stress due to the substantially different coefficient of thermal expansion between these two substrates. To improve this process a new method using temperature lower than critical temperature and two kinds of wavelength light irradiate to split the thin layer by similar formation of hydrogen caused microcracks is be used. These two kinds of wavelength light’ frequency is located on infrared and ultraviolet range. By these two wavelength light irradiate hydrogen growth and overlapping in silicon will become easier. It is because ultraviolet light will let elections surround with silicon-hydrogen molecule excited and infrared light will let the vibration of silicon - hydrogen molecule stronger. As a result lower temperature at the silicon layer transfer is accomplished.