晶圓鍵合發展的目標，就是希望能讓所有的材料間，不需任何的黏著層，即可有強大的黏結能力將兩種不同屬於不同的材料接合。在已經發展的晶圓鍵合技術裡，包含濕式活化輔助鍵結、陽極鍵結、電漿活化輔助鍵結、真空鍵結等等，不管任何的鍵結方式，都必須再靠退火製程來提升鍵結強度，也因此，熱應力便成為了一個棘手的問題。 本論文的重點旨在討論利用電漿活化輔助鍵結的方式，執行氮矽基材料間的直接鍵合；實驗分成三大部分，首先討論以RIE產生氮電漿活化氮化矽表面而得的表面粗糙度值；其次，架構在先前的討論上，執行Si3N4 –Si3N4薄膜的直接鍵合，並取得最佳的鍵結狀況。而後，討論鍵結後試片在退火時過程中的劣化現象，並提出解決得方案。 Wafer bonding is a novel technology to bond two different wafers by no any adhesive layer. Various methods have been developed such as chemical activaion, anodic bonding, plasma activation, vacum bonding, etc. Even this, we still cannot get strongly bonding strength without annealing process. The temperature of annealing process is usually too high to let bonding failure by themal stress. So, how to get the high bonding strength with low annealing temperature becomes an important topic today. This study provided a method to directly bond the wafers there were silicon nitride thin film had been deposited on and get strongly bonding strength at low temperature. There are three main developments in this study. First, the surface roughness of silicon nitride resulted from using RIE-generated N2-plasma to activate that was discussed. Second, in order to obtain the optimum bonding result, direct Si3N4- Si3N4 bonding can be performed by above discussions. Finally, some solutions have been suggestted to improve degrading phenomenon of bonding interface formed during annealing process.