English  |  正體中文  |  简体中文  |  Items with full text/Total items : 72887/72887 (100%)
Visitors : 23275566      Online Users : 503
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/2914

    Title: Sn-3Ag-0.5Cu-XNi(X=0.0~0.1 wt%)銲料迴銲後機械性質與電化學遷移之探討;Mechanical property and Electrochemical Migration of the Sn-3Ag-0.5Cu-XNi(X=0.0~0.1 wt%) Reflowed on Cu-pads in various solution.
    Authors: 彭中南;Chung-nan Peng
    Contributors: 機械工程研究所
    Keywords: 電化學遷移;銲料;electrchemical migration;solder
    Date: 2007-06-21
    Issue Date: 2009-09-21 12:00:20 (UTC+8)
    Publisher: 國立中央大學圖書館
    Abstract: 本論文在探討四元無鉛銲料Sn-3Ag-0.5Cu-XNi(X=0.0~0.1)迴銲後之界面結構、機械性質以及電化學遷移行為。 由金相圖觀察得知,在Sn-3Ag-0.5Cu銲料中添加微量的鎳(0.005~0.1%),組織並沒什麼變化,但會讓Cu6Sn5與Cu3Sn變為(Cu,Ni)6Sn5與(Cu,Ni)3Sn,若鎳濃度增加,將會使較粗的介金屬化合物層變為較細的(Cu,Ni)6Sn5。 在錫球的ㄧ半(大約160μm)切面進行微硬度的量測,跟在錫球的1/4(大約80μm)的地方進行推球試驗ㄧ樣,發現微硬度(Hv)及推球強度(N)隨著鎳含量的增加並沒有什麼太大的改變,然而若在介金屬層附近的地方進行量測(大約15μm),則發現微硬度會隨著鎳含量的添加(0.005~0.1wt%)從23.12±0.21(Hv),上升到26.28±0.34(Hv),而推球強度則會從22.12±0.12 (N),上升到28.34±0.47 (N)。 在電化學遷移試驗方面,Sn-3Ag-0.5Cu-XNi(X=0.0~0.1)以250℃熱處裡迴銲在銅墊上,浸入逆滲透純水(導電度約10.6μS/cm)中,施加不同偏壓(2V,3V及5V),量測其電化學遷移時兩極間之電流,當電流急速上升造成兩極短路所耗費的時間,稱為電化學遷移時間(tm),比較此四元銲錫之電化學遷移時間(tm)顯示:當施加3V偏壓時,隨著銲料中鎳含量從0.0增加至0.1wt%,其電化學遷移時間(tm)從66秒縮短到28秒,但若與傳統錫鉛銲料相比,則Sn-3Ag-0.5Cu-XNi(X=0.0~0.1)仍優於傳統錫鉛。 由陽極動態及化曲線可以得知,隨著鎳含量的增加其陽極電流越大,顯示隨著鎳含量的增加,會促進陽極表面金屬離子的解離,與陰極表面金屬離子的還原。 The microstructure, mechanical properties and electrochemical migration for the Sn-3Ag-0.5Cu-XNi(X=0.0~0.1) lead-free solders reflowed on Cu-pads were investigated. Metallurgical observation indicated that a slight addition (0.005~0.100 wt%)of nickel in the Sn-3Ag-0.5Cu solder caused no marked change in the bulk microstructure but led to thicken the interlayer by formation of (Cu, Ni)6Sn5 on the (Cu, Ni)3Sn instead of Cu6Sn5 on Cu3Sn. The higher nickel concentration, the thicker is the intermetallic layer in which finer (Cu, Ni)6Sn5 distributed. At the half-level (roughly 160 μm -height from the pad) and one fourth-level (about 80 μm -height from the pad) of the solder hemisphere, both the microhardness (Hv) and shear strength were almost invariant with increasing the addition of nickel. However, at the level near the intermetallic layer (with a height of 15 μm Cu-pad) the microhardness increased from 23.12±0.21(Hv) to 26.28±0.34(Hv) and the shear strength increases from 22.12±0.12 (N) to 28.34±0.47 (N) with increasing nickel from 0.005 to 0.100 wt%. In the electrochemical migration test, a couple of conductors made of Sn-3Ag-0.5Cu-XNi(x=0.0~0.1) on Cu-pads annealed at 250℃ for 60 s was immersed in de-ionized water (with conductivity of 10.6μS/cm) exerted with 2, 3 and 5 V across the conductors. The duration of short circuit was defined as the migration time(tm) that was determined by a sudden rise of current. At a bias of 3 V, the magnitude of tm decreased from 66s to 28s with increasing the nickel content from 0 to 0.100 wt% in the solder. However, the resistance to migration is much better for Sn-3Ag-0.5Cu-XNi(X=0.0~0.1) solders than the traditional Sn-Pb one. The anodic potentiodynamic polarization shows that the anodic current of Sn-3Ag-0.5Cu-XNi(X=0.0~0.1) solder increase with increasing nickel content in the solders. It implies that dissolution of metal contents from the anode and their re-deposition on cathode increases with increasing the nickel content.
    Appears in Collections:[機械工程研究所] 博碩士論文

    Files in This Item:

    File SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明