CHARACTERISTICS OF PSEUDOMORPHIC ALGAAS INXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL FIELD-EFFECT TRANSISTORS

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Title:	CHARACTERISTICS OF PSEUDOMORPHIC ALGAAS INXGA1-XAS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL FIELD-EFFECT TRANSISTORS
Authors:	YANG,MT;CHAN,YJ;CHEN,CH;CHYI,JI;LIN,RM;SHIEH,JL
Contributors:	電機工程研究所
Keywords:	HETEROSTRUCTURE
Date:	1994
Issue Date:	2010-06-29 20:24:04 (UTC+8)
Publisher:	中央大學
Abstract:	The pseudomorphic properties of doped-channel field-effect transistors have been thoroughly investigated based on A]GaAs/InGa1-xAs (0 less-than-or-equal-to x less-than-or-equal-to 0.25) heterostructures with different In contents. Through various analytical schemes and device characterization, we observed that by introducing a 150 angstrom strained In0.15Ga0.85As channel we can enhance device performance; however, this strained channel is not stable after high-temperature heat treatment. By further increasing the In content up to x = 0.25, the device performance started to degrade, which is associated with strain relaxation in this highly strained channel.
Relation:	JOURNAL OF APPLIED PHYSICS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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