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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29413


    Title: EFFECTS OF N2O-PLASMA TREATMENT OF A-SIOXNY/A-SINX GATE INSULATORS ON ELECTRICAL STABILITY OF A-SIH THIN-FILM TRANSISTORS
    Authors: JEN,TS;LEU,ST;CHOU,TC;HONG,JW;CHANG,CY
    Contributors: 電機工程研究所
    Keywords: AMORPHOUS-SILICON
    Date: 1994
    Issue Date: 2010-06-29 20:24:09 (UTC+8)
    Publisher: 中央大學
    Abstract: N2O-plasma was used to treat the as-deposited a-SiO(x)N(y)/a-SiN(x) gate insulators of inverted-staggered a-Si:H thin-film transistors (TFTs), and its effects on electrical properties of TFTs were investigated. The TFTs with N2O-plasma-treated gate insulators tended to have a smaller threshold voltage (V(th)), V(th) Shift and hysteresis width (W(FB)) of the forward and backward transfer characteristics. In addition, the results of a bias-temperature stress (BTS) experiment showed that the N2O-Plasma-treated devices had a smaller decay of drain current with time. These phenomena demonstrated that the N2O-PlasMa treatment could be used to improve the electrical stability of a-Si:H TFTs.
    Relation: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
    Appears in Collections:[電機工程研究所] 期刊論文

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