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    题名: THERMAL-STABILITY OF STRAINED ALGAAS/INXGA1-XAS (0.15-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.25) DOPED-CHANNEL STRUCTURES
    作者: YANG,MT;LIN,RM;CHAN,YJ;SHIEH,JL;CHYI,JI
    贡献者: 電機工程研究所
    关键词: FIELD-EFFECT TRANSISTORS;QUANTUM
    日期: 1994
    上传时间: 2010-06-29 20:24:36 (UTC+8)
    出版者: 中央大學
    摘要: Thermal stability of strained AlGaAs/InxGa1-xAs (0.15 less than or equal to x less than or equal to 0.25) doped-channel structures was evaluated for different In contents after a high temperature process. Strained channels may be relaxed after heat treatment resulting in carrier decrease, sheet resistance increase, and layers becoming more light sensitive. This degradation is more profound for high In content doped-channel films. Doped-channel FET characteristics confirm this conclusion, and low-fequency noise spectra indicate the existence of traps in the thermally treated devices.
    關聯: GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993
    显示于类别:[電機工程研究所] 期刊論文

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