ENHANCEMENT AND DEPLETION-MODE ALGAAS/IN0.15GA0.85AS HEMTS FABRICATED BY SELECTIVE ION-IMPLANTATION

NCU Institutional Repository > 資訊電機學院 > 電機工程研究所 > 期刊論文 > Item 987654321/29444

jsp.display-item.identifier=請使用永久網址來引用或連結此文件: http://ir.lib.ncu.edu.tw/handle/987654321/29444

题名:	ENHANCEMENT AND DEPLETION-MODE ALGAAS/IN0.15GA0.85AS HEMTS FABRICATED BY SELECTIVE ION-IMPLANTATION
作者:	CHAN,YJ;YANG,MT
贡献者:	電機工程研究所
日期:	1993
上传时间:	2010-06-29 20:24:56 (UTC+8)
出版者:	中央大學
摘要:	Enhancement- and depletion-mode AlGaAs/In0.15Ga0.85As HEMTs were fabricated on the same wafer by the selective ion implantation technique. This implantation results in extra carriers in the area of D-HEMTs, and therefore E- and D-HEMTs can be realised simultaneously after a single gate lithography step. As compared with the conventional approach, this selective ion implantation provides a convenient method for implementing the E/D-mode logic circuits for high-speed and low-power applications.
關聯:	ELECTRONICS LETTERS
显示于类别:	[電機工程研究所] 期刊論文

文件中的档案:

档案	描述	大小	格式	浏览次数
index.html		0Kb	HTML	557	检视/开启

在NCUIR中所有的数据项都受到原著作权保护.

社群 sharing