HYDROGENATED AMORPHOUS SILICON-CARBIDE THIN-FILM LIGHT-EMITTING DIODE WITH QUANTUM-WELL-INJECTION STRUCTURE

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题名:	HYDROGENATED AMORPHOUS SILICON-CARBIDE THIN-FILM LIGHT-EMITTING DIODE WITH QUANTUM-WELL-INJECTION STRUCTURE
作者:	JEN,TS;CHEN,JY;SHIN,NF;HONG,JW;CHANG,CY
贡献者:	電機工程研究所
日期:	1993
上传时间:	2010-06-29 20:25:00 (UTC+8)
出版者:	中央大學
摘要:	To improve the electroluminescence (EL) intensity of the hydrogenated amorphous silicon carbide (a-SiC:H) pin thin-film light-emitting diode (TFLED), a quantum-well-injection (QWI) structure has been incorporated into the i-layer of an a-SiC:H pin TFLED at the p-i interface. The obtained brightness of this QWI TFLED is 256 cd/m2 at an injection current density of 800 mA/cm2, which is about three orders of magnitude higher than the brightness of an a-SiC:H pin TFLED. Also, a comparatively lower EL threshold voltage of 6 V was observed for this a-SiC:H QWI TFLED.
關聯:	ELECTRONICS LETTERS
显示于类别:	[電機工程研究所] 期刊論文

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