GRADED-GAP A-SIC-H P-I-N THIN-FILM LIGHT-EMITTING-DIODES

NCU Institutional Repository > 資訊電機學院 > 電機工程研究所 > 期刊論文 > Item 987654321/29461

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题名:	GRADED-GAP A-SIC-H P-I-N THIN-FILM LIGHT-EMITTING-DIODES
作者:	HONG,JW;SHIN,NF;JEN,TS;NING,SL;CHANG,CY
贡献者:	電機工程研究所
日期:	1992
上传时间:	2010-06-29 20:25:19 (UTC+8)
出版者:	中央大學
摘要:	In order to improve the performance of hydrogenated amorphous-silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diodes (TFLED's), a p-i-n TFLED with a graded p-i junction has been proposed and fabricated. The electroluminescence (EL) intensity of the proposed TFLED was more than 100 times higher than that of the basic p-i-n TFLED and about 35 times lower than that of the conventional green LED, at the same injection current density. This significant improvement was attributed to the better interface property and enhancement of hole injection efficiency by using the graded-gap p-i junction.
關聯:	IEEE ELECTRON DEVICE LETTERS
显示于类别:	[電機工程研究所] 期刊論文

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