350nm波長光能量輔助矽晶表面光電平滑化; 350nm Wavelength of Light-Energy-Assisted Photoelectric Silicon Surface Smoothing

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题名:	350nm波長光能量輔助矽晶表面光電平滑化;350nm Wavelength of Light-Energy-Assisted Photoelectric Silicon Surface Smoothing
作者:	陳秉翔;Bing-Siang Chen
贡献者:	機械工程研究所
关键词:	表面平滑化;光能量;矽晶;Light-Energy;Silicon Surface Smoothing
日期:	2008-06-11
上传时间:	2009-09-21 12:01:54 (UTC+8)
出版者:	國立中央大學圖書館
摘要:	Smart-Cut®技術在SOI 薄膜轉移製程上已被普遍應用，但轉移時氫離子聚合所造成之損傷，至使轉移層上方形成一層粉碎層，且轉移後之單晶矽薄膜的品質，會對後續元件之製作及效能產生影響，因此通常需要在多一道化學機械研磨(CMP)拋光的程序來將此粉碎層移除。 CMP 程序對於粉碎層移除後，使薄膜的均勻度及厚度產生變化，不易達到奈米等級精準度的要求。故為製作奈米等級的單晶矽層SOI 材料，本研究主要目的在於利用蝕刻的方式，透過腐蝕製程，藉由比較不同結晶矽間的腐蝕速率比，來去除此一粉碎層損傷區域，同時達到表面平滑化的效果。以稀釋之氫氟酸加上雙氧水所調配之蝕刻液，蝕刻粉碎層與轉移單晶矽層會因腐蝕速率差異可作為腐蝕停止層之用。且本實驗發現若同時添加350nm 波長之紫外光(Ultraviolet)照射，能輔助加速蝕刻反應的進行，進而增加粉碎層移除速率，且有效降低矽晶表面粗糙度，達到矽單晶轉移薄膜層表面平滑化之效果。 Smart-Cut® SOI technology in the layer transfer process has been widelyapplied, but the hydrogen ion implantation causes the injury to make a lattice-defect smash region formed at the top surface. The transfer of single-crystal silicon film quality has an impact on the follow-up components of the production and performance. Therefore, usually needs an extra chemical mechanical polishing (CMP) process to remove the smash region. CMP process removing the smash region may cause of film uniformity and thickness of the changes, but is difficult to achieve nanometer scale accurate requirements. Therefore, for the production of nano-scale of single-crystal silicon layer SOI materials, the main purpose of this study is using an etching approach. Through the etching process, with different etch-rate with vary crystalline structure, the smash region will be etched out to achieve the effect of smoothing the surface at the same time. The etching fluid is hydrofluoric acid with hydrogen peroxide diluted. For etching the smash region and the transfer film of the single crystal silicon layer, the different etch-rate is used for keeping complete silicon layer without change. And if added 350 nm wavelength of UV (Ultraviolet) radiation at the same time, etching can be enhanced, thereby increasing the removal rate, to effectively reduce the silicon surface roughness, and then to achieve the effect of single-crystal silicon thin film transfer surface smoothing.
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