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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29718


    Title: Optical and structural properties of Mg-ion implanted GaN nanowires
    Authors: Huang,PJ;Chen,CW;Chen,JY;Chi,GC;Pan,CJ;Kuo,CC;Chen,LC;Hsu,CW;Chen,KH;Hung,SC;Chang,CY;Pearton,SJ;Ren,F
    Contributors: 光電科學研究中心
    Keywords: GALLIUM NITRIDE NANOWIRES;RAMAN-SCATTERING;LUMINESCENCE BAND;PHOTOLUMINESCENCE;TEMPERATURE;NANORODS;DISORDER;DEFECTS;GROWTH
    Date: 2009
    Issue Date: 2010-06-30 15:39:27 (UTC+8)
    Publisher: 中央大學
    Abstract: Mg+ ions (60 keV) were implanted into GaN nanowires (NWs) with total fluxes of 5 x 10(12)-5 x 10(14) cm(-2) followed by thermal annealing at 700 degrees C in NZ ambient. Transmission electron microscopic images showed amorphous layer formation and defect accumulation in the higher dose Mg-implanted GaN NWs after annealing. Photoluminescence spectra (300 K) of the annealed Mg-implanted GaN NWs exhibited near-band-edge (NBE) emission, donor-acceptor pair (DAP) emission, and defect-related yellow luminescence. With increasing dose, the NBE and DAP emissions are red shifted. Similar phenomena were observed in samples implanted with At to produce similar amounts of lattice disorder. The NWs show a much higher sensitivity to defect accumulation than GaN thin films. (C) 2008 Elsevier Ltd. All rights reserved.
    Relation: VACUUM
    Appears in Collections:[光電科學研究中心] 期刊論文

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