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    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29721

    Title: Effects of multiple buffer layers on structural electronic properties of GaN growth by atmospheric pressure Organometallic Vapor Phase Epitaxy
    Authors: Yang,CC;Wu,MC;Chang,CA;Chi,GC
    Contributors: 光電科學研究中心
    Date: 1999
    Issue Date: 2010-06-30 15:39:31 (UTC+8)
    Publisher: 中央大學
    Abstract: High-quality GaN epitaxial films have been grown on sapphire by organometallic vapor phase epitaxy using multiple-pair buffer layers. Each pair of buffer layers consists of a thin GaN nucleation layer grown at a low temperature around 500 degrees C and a thick GaN epitaxial layer around 4 mu m thick grown at a high temperature around 1000 degrees C. The sample with four-pair buffer layers showed much improved GaN epitaxial films, as compared to the sample with only one-pair of buffer layers. The better qualities include narrower full width at half maximum of 150 arc-s and stronger intensity in double-crystal X-ray diffraction, higher electron mobility of 420 cm(2) V-s(-1), lower background concentration of 3 x 10(17) cm(-3), and lower etch-pit density of mid-10(5) cm(-2). (C) 1999 Elsevier Science S.A. All rights reserved.
    Appears in Collections:[光電科學研究中心] 期刊論文

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