PERFORMANCE ENHANCEMENT USING WSIX/ITO ELECTRODES IN INGAAS/INALAS MSM PHOTODETECTORS

NCUIR > Research Center > Optical Sciences Center > journal & Dissertation > Item 987654321/29723

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29723

Title:	PERFORMANCE ENHANCEMENT USING WSIX/ITO ELECTRODES IN INGAAS/INALAS MSM PHOTODETECTORS
Authors:	CHU,CC;CHAN,YJ;YUANG,RH;CHYI,JI;LEE,CT
Contributors:	光電科學研究中心
Keywords:	INGAAS
Date:	1995
Issue Date:	2010-06-30 15:39:34 (UTC+8)
Publisher:	中央大學
Abstract:	A thin (200 Angstrom) WSix film is used to improve the light admittance, without sacrificing the Schottky performance, of InAlAs/InGaAs metal-semiconductor-metal (MSM) photodetectors. A 73% transmittance was achieved at a wavelength of 1.55 mu m. This thin layer followed by a thick layer of indium tin oxide (ITO), used as a gate material, demonstrated a responsivity of 0.44A/W, which corresponds to a 70% improvement compared with the conventional thick metal gate MSM detectors.
Relation:	ELECTRONICS LETTERS
Appears in Collections:	[Optical Sciences Center] journal & Dissertation

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