Enhanced growth of low-resistivity cobalt silicide by using a Co/Au/Co trilayer film on Si0.8Ge0.2 virtual substrate

NCUIR > Engineering College > Institute of Materials Science and Engineering > journal & Dissertation > Item 987654321/29781

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/29781

Title:	Enhanced growth of low-resistivity cobalt silicide by using a Co/Au/Co trilayer film on Si0.8Ge0.2 virtual substrate
Authors:	Cheng,S. L.;Chen,H. Y.;Lee,S. W.
Contributors:	材料科學與工程研究所
Keywords:	COSI2;PHASE;NUCLEATION;THICKNESS;AU
Date:	2008
Issue Date:	2010-07-06 15:57:49 (UTC+8)
Publisher:	中央大學
Abstract:	Formation of Co germanosilicides on Si0.8Ge0.2 virtual substrates with a Co/Au/Co sandwich thin film after different heat treatments has been investigated. The sequence of phase formation is the same as the reaction of blanket Co thin film with (001) Si.
Relation:	APPLIED SURFACE SCIENCE??
Appears in Collections:	[Institute of Materials Science and Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	676	View/Open

社群 sharing