Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing

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Title:	Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing
Authors:	Chen,P. S.;Lee,S. W.;Lee,M. H.;Liu,C. W.
Contributors:	材料科學與工程研究所
Keywords:	QUANTUM DOTS;GE;ISLANDS;GROWTH;EVOLUTION
Date:	2008
Issue Date:	2010-07-06 15:57:52 (UTC+8)
Publisher:	中央大學
Abstract:	High-quality relaxed SiGe films on Si (0 0 1) have been demonstrated with a buffer layer containing modified SiGe (m-SiGe) islands in ultra-high vacuum chemical vapor deposition (UHV/CVD) system. The m-SiGe islands are smoothened by capping an appropriate
Relation:	APPLIED SURFACE SCIENCE
Appears in Collections:	[Institute of Materials Science and Engineering] journal & Dissertation

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