摘 要 近年來氮化矽層製作方式相繼問世，在本論文中使用離子束氮化方式(IBN)來製作氮化矽層，其主要分為在常溫下與高溫氮化二種，製作方式主要差別在於基板有無加熱來作主要區別，在傳統的加熱氮化方式中，由於製程要求因此所產生的熱會損壞矽基板及造成雜質重組等缺陷，對於後續的微電子製程有很大阻礙【1】【2】【3】。 因此在本實驗中利用常溫下離子束氮化方式(IBN)來製作氮化矽層，一來可以製作低基板溫度的氮化矽層，二來可以得到均勻的氮化矽層。並且加入不同的實驗參數包括不同的植入劑量以及不同的加速電壓，最後經由X光光電子能譜儀(XPS)檢測來探討形成的氮化矽層各種厚度及濃度百分比變化趨勢，及包含離子束氮化前後的矽表面全譜分析及縱深掃描分析。 Abstract In recent years, many ways of producing nitride silicon layer has be- en introduced to the world. A way of producing nitride silicon layer by ION BEAM NITRIDATION(IBN) will be discussed in this study. The way of pro- ducing nitride silicon layer by ION BEAM NITRIDATION (IBN) is mainly d- ivided into two conditions-at room temperature and at high temperature and the differences lie in the substrate with or without heating.Traditionally, when heating the substrate to produce the layer, the heat produced durin- g the process would damage the silicon board and cause the impurities r- estructure, and the damage also causes an obstruction to the following micro - electronic producing.【1】【2】【3】 Therefore, in this study, the silicon nitride layer is produced at room temperature by ION BEAM NITRIDATION (IBN) to produce a low tempe- rature silicon nitride layer as well as to get a well-mixed silicon layer. Be- sides, with different experiment parameters, such as different doses and different voltage to speed up the ion beam to investigate the formation of silicon nitride layer is conducted in this study. In this experiment, X-ray P- hotoelectron Spectroscopy(XPS) is used to analyse the changes of varied thickness and the density percentage of nitride silicon layer. Besides, an analysis of full spectrum and in-depth scan in silicon surface of ion beam nitride will also be carried out in this study.