Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers

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Title:	Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers
Authors:	Johnson,JW;Zhang,AP;Luo,WB;Ren,F;Pearton,SJ;Park,SS;Park,YJ;Chyi,JI
Contributors:	化學工程與材料工程研究所
Keywords:	TEMPERATURE-DEPENDENCE;PERFORMANCE;TRANSISTORS
Date:	2002
Issue Date:	2010-07-06 16:27:17 (UTC+8)
Publisher:	中央大學
Abstract:	Schottky rectifiers with implanted p(+) guard ring edge termination fabricated on free-standing GaN substrates show reverse breakdown voltages up to 160 V in vertical geometry devices. The specific on-state resistance was in the range 1.7-30 Omega(.)cm(2)
Relation:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Appears in Collections:	[National Central University Department of Chemical & Materials Engineering] journal & Dissertation

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