The growth of an epitaxial Mg-Al spinel layer on sapphire by solid-state reactions

NCUIR > Engineering College > Graduate Institute of Mechanical Engineering > journal & Dissertation > Item 987654321/30792

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/30792

Title:	The growth of an epitaxial Mg-Al spinel layer on sapphire by solid-state reactions
Authors:	Liu,CM;Chen,JC;Chen,CJ
Contributors:	機械工程研究所
Keywords:	SYSTEM MGO-AL2O3;ALUMINUM-OXIDE;THIN-FILMS;INTERDIFFUSION;MAGNESIUM;ORIENTATION;DIFFUSION;INTERFACE;MECHANISM;MGAL2O4
Date:	2005
Issue Date:	2010-07-06 16:27:29 (UTC+8)
Publisher:	中央大學
Abstract:	In this work an epitaxial Mg-Al spinel layer was successfully grown on a sapphire single crystal surface by solid-state reactions. An Mg film (15 mu m) was sputtered onto the sapphire crystal using RF magnetron sputtering. An epitaxial Mg-Al spinel layer
Relation:	JOURNAL OF CRYSTAL GROWTH
Appears in Collections:	[Graduate Institute of Mechanical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	426	View/Open

社群 sharing