異質材料（石英/矽）晶圓鍵合之薄膜應力模擬與研究; Dissimilar Material Wafer Bonding - Silicon on Quartz THIM FILMSTRESSES SIMULATION and STUDY

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题名:	異質材料（石英/矽）晶圓鍵合之薄膜應力模擬與研究;Dissimilar Material Wafer Bonding - Silicon on Quartz THIM FILMSTRESSES SIMULATION and STUDY
作者:	林家慶;Jia-ching Lin
贡献者:	機械工程研究所
关键词:	晶圓鍵合;wafer bonding
日期:	2008-07-08
上传时间:	2009-09-21 12:05:41 (UTC+8)
出版者:	國立中央大學圖書館
摘要:	晶圓鍵合技術最大的特色在於能鍵合不同材質的晶圓片，提供各式晶圓材料整合的可能性，石英與矽晶圓鍵合可廣泛應用在微機電、CCD及微顯示器上，但在鍵合過程中，在其中退火處理步驟之晶圓，因矽與石英晶圓之間熱膨脹係數相差太大，而存有熱應力使元件不穩定或異常，造成有如圓形鼓起的變形或者向下凹的形狀，使晶圓材料翹曲、破裂、分離等不利於鍵合的情形發生導致材料的鍵合失敗，這些情況都是須要去加以分析並改進。因此在研究中將討論如何利用對稱晶圓鍵合（石英/矽/石英）和減少晶圓厚度來解決熱膨脹係數所造成的熱應力問題，並在平板力學理論架構下，分析薄膜應力造成基板彎曲變形的數學架構與力學行為，再配合電腦分析軟體ANSYS建立合理之模型來提供數值解，探討數學模式之正確性，以及利用軟體模擬出最佳的幾何鍵合方式，以瞭解觀察鍵合界面之鍵合強度、薄膜應力分佈等關係，最後對鍵合晶圓改變參數後的應力、變形值與理論值做一討論來驗證成果。 One of the characteristics of wafer bonding technology is joining different materials, therefore, it can provide possibility of integration to all kinds of wafer. The quartz and silicon bonded wafer can be widely used in MEMS, CCD and micro-display. But in the anneal step of the wafer bonging process, thermal stress will cause components instability or abnormality due to the large difference between the coefficient of thermal expansion on silicon wafer and quartz wafer. The abnormalities include circular bum or cave in shape deformity. Leading to conditions such as warping, rupture, separation or the wafer material. Due to above reasoning, the study will discuss how to use symmetry wafer bonding structure (quartz / silicon / quartz) to reduce the thickness of wafers to solve the coefficient of thermal expansion caused by heat. Under flat-panel mechanics theoretical framework, to analyze the mathematical structure and mechanical behavior of the behavior of thin film stress that causes the substrate bending and deformation is along with computer software, ANSYS, to establish a rational analysis model to provide numerical solution. That can examine the accuracy of mathematical models and using simulation software to find best use of the geometric bond and learning from observation of the key bond interface strength, film stress distribution relations. At the end, the changes of the parameters of the bond wafer to the stress and deformation and the theoretical value to verify the results is discussed.
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