Enhancing the quantum efficiency of InGaN green light-emitting diodes by trimethylindium treatment

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/31836

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Title:	Enhancing the quantum efficiency of InGaN green light-emitting diodes by trimethylindium treatment
Authors:	Lin,Hung-Cheng;Lin,Ruo-Syuan;Chyi,Jen-Inn
Contributors:	電機工程研究所
Keywords:	MOLECULAR-BEAM EPITAXY;CHEMICAL-VAPOR-DEPOSITION;GROWTH;GAN;SURFACTANT;INDIUM;WELLS;GAN(0001)
Date:	2008
Issue Date:	2010-07-06 18:12:36 (UTC+8)
Publisher:	中央大學
Abstract:	This work demonstrates the effectiveness of using trimethylindium (TMIn) treatment to improve the luminescence efficiency of InGaN/GaN quantum wells grown by metal-organic vapor-phase epitaxy. Photoluminescence, x-ray diffraction, atomic force microscopy,
Relation:	APPLIED PHYSICS LETTERS
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

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