English  |  正體中文  |  简体中文  |  Items with full text/Total items : 68069/68069 (100%)
Visitors : 23073180      Online Users : 153
RC Version 7.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Tips:
  • please add "double quotation mark" for query phrases to get precise results
  • please goto advance search for comprehansive author search
  • Adv. Search
    HomeLoginUploadHelpAboutAdminister Goto mobile version

    Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/31845

    Title: High power density, high efficiency 1 W SiGe power HBT for 2.4 GHz power amplifier applications
    Authors: Yeh,Ping-Chun;Chiou,Hwann-Kaeo;Lee,Chwan-Ying;Yeh,John;Tsai,Yi-Hung;Tang,Denny;Chern,John
    Contributors: 電機工程研究所
    Keywords: THERMAL DESIGN
    Date: 2008
    Issue Date: 2010-07-06 18:12:48 (UTC+8)
    Publisher: 中央大學
    Abstract: In this paper, an improved layout and thermal management of eight unit-cells SiGe power HBT with emitter area of 8 x 0.6 x 10 mu m(2) were designed for high power density and efficiency performance. The on-wafer power characteristics were measured using a
    Appears in Collections:[電機工程研究所] 期刊論文

    Files in This Item:

    File Description SizeFormat

    All items in NCUIR are protected by copyright, with all rights reserved.

    社群 sharing

    ::: Copyright National Central University. | 國立中央大學圖書館版權所有 | 收藏本站 | 設為首頁 | 最佳瀏覽畫面: 1024*768 | 建站日期:8-24-2009 :::
    DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback  - 隱私權政策聲明