1.32 mu m InAs/GaAs quantum-dot resonant-cavity light-emitting diodes grown by metalorganic chemical vapor deposition

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > journal & Dissertation > Item 987654321/32145

Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32145

Title:	1.32 mu m InAs/GaAs quantum-dot resonant-cavity light-emitting diodes grown by metalorganic chemical vapor deposition
Authors:	Huang,Kun-Fu;Lee,Feng-Ming;Hu,Chih-Wei;Peng,Te-Chin;Wu,Meng-Chyi;Lin,Chia-Chien;Hsieh,Tung-Po;Chyi,Jen-Inn
Contributors:	電機工程研究所
Date:	2006
Issue Date:	2010-07-06 18:19:35 (UTC+8)
Publisher:	中央大學
Abstract:	The first demonstration of InAs/GaAs quantum-dot (QD) resonant-cavity light-emitting diode (RCLED) operating at 1.32 mu m at room temperature is reported. A single-layer InAs QDs inserted in GaAs matrix as the active medium was grown by metalorganic chemi
Relation:	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Appears in Collections:	[Graduate Institute of Electrical Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	775	View/Open

社群 sharing