An equivalent-circuit modelling on vertical and horizontal integrations for MOS flat-band voltage simulation

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Please use this identifier to cite or link to this item: http://ir.lib.ncu.edu.tw/handle/987654321/32157

Title:	An equivalent-circuit modelling on vertical and horizontal integrations for MOS flat-band voltage simulation
Authors:	Chang,CC;Li,SJ;Tsai,YT
Contributors:	電機工程研究所
Date:	2006
Issue Date:	2010-07-06 18:19:53 (UTC+8)
Publisher:	中央大學
Abstract:	The fixed oxide charge will cause the MOS capacitor (MOS-C) flat-band voltage to shift. We can observe the potential distribution to determine the MOS-C flat-band voltage. However, the potential distribution can be obtained from the integration of the ele
Relation:	INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS
Appears in Collections:	[電機工程研究所] 期刊論文

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